| 摘要 |
<p>PURPOSE: A semiconductor device and a method of manufacture thereof are provided to form epi-silicon within a silicon layer of a drain region lower part and source area. The floating body effect is improved. CONSTITUTION: An SOI(Silicon On Insulator) substrate comprises a silicon substrate(200), and a filling oxide layer(210) and a silicon layer(220). The filling oxide layer is formed on the silicon substrate. The silicon layer is formed on the filling oxide layer. The gate(G) is formed on the silicon layer. The source area and a drain region(270) are formed within the silicon layer of both side of gate. The epi-silicon(240) is formed within the silicon layer part of the drain region lower part and source area.</p> |
