| 摘要 |
PURPOSE: An ion injection method of a semiconductor device enforces an ion injection process without the ion implantation mask to a dielectric layer formation procedure and an anistropic etching process. A process time and a process cost are reduced. CONSTITUTION: A first gates to a third gate are formed on a semiconductor substrate. Here, the width of the first gate interval first area is narrower than the width of the first gate and the second gate interval second part. Here, the width of the second part is narrower than the width of the third gate interval third region. The first junction area(116a) is formed in the above semiconductor top of the substrate of the interval of gates. The protective film(118) crowds on the first area. The second junction area(116b) is formed in the third region.
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