发明名称 WAFER DEPOSITION APPARATUS AND METHOD HAVING SAME
摘要 PURPOSE: A wafer deposition apparatus and method thereof are similar the purge gas and carrier gas among the unloading wafer. The damage of wafer due to the collision of the purge gas and carrier gas are prevented. CONSTITUTION: A source gas and the first carrier gas are provided to the inside of the deposition chamber(S10). Wafer is transferred to the inside of the deposition chamber(S20). In the inside of the deposition chamber, the deposition process is enforced on wafer(S30). In the deposition chamber inside, the change over [change] of the carrier gas is included. Wafer is unloaded from the deposition chamber(S40). Wafer is gripped in the purge gas for spraying wand unit.
申请公布号 KR20100033197(A) 申请公布日期 2010.03.29
申请号 KR20080092257 申请日期 2008.09.19
申请人 SILTRON INC. 发明人 SEO, BYOUNG SOO
分类号 H01L21/205 主分类号 H01L21/205
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