SEMICONDUCTOR DEVICE AND FORMING METHOD OF THE SAME

摘要

PURPOSE: An N type capping film and a semiconductor device and a method of formation thereof are provided to reduce flat band voltage. The threshold voltage of the metal gate electrode can be low made. CONSTITUTION: A first well domain(106) is arranged in a semiconductor substrate(100). A first gate electrode(140) is arranged on the first well domain. A first N type capping pattern(110), and a first P-type the capping pattern(130) and a first gate insulation pattern(120) are allowed in between the first well domain and the first gate electrode. The first N type capping pattern comprises at least one of laO, gdO, dyO, srO, baO and ErO. The first P-type capping pattern comprises an aluminum oxide film and an aluminum metal oxide layer.