ELECTRODE STRUCTURE FOR ELECTRONIC AND OPTO-ELECTRONIC DEVICES
摘要
<p>The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.</p>
申请公布号
CA2470206(C)
申请公布日期
2010.03.30
申请号
CA20022470206
申请日期
2002.11.26
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
ALVARADO, SANTOS F.;BEIERLEIN, TILMAN A.;CRONE, BRIAN;DRECHSLER, UTE;GERMANN, ROLAND W.;KARG, SIEGFRIED F.;MUELLER, PETER;RIEL, HEIKE;RIESS, WALTER;RUHSTALLER, BEAT;SEIDLER, PAUL;WIDMER, ROLAND W.
