PHASE CHANGE RAM DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A vertical type PN diode having the width in which in a phase change memory device and manufacturing method thereof, the width of the central part bigger than the width of the top end portion and bottom part is formed. The volume of the vertical type PN diode can be multiplied. CONSTITUTION: A phase change memory device comprises a vertical type PN diode(250). A vertical type PN diode has the bottom part(241), and the laminating structure of the top end portion(243) and central part(242). At this time, the width of the central part bigger than the width of the top end portion and bottom part. The bottom part of the vertical type PN diode has the width of 90~100nm. The central part of the vertical type PN diode has the width of 150~200nm. The top end portion of the vertical type PN diode has the width of 90~100nm.