| 摘要 |
<p>#CMT# #/CMT# The magnetic metallic layers consist of a magnetic element. The interfacial magnetic anisotropy occur perpendicular to the plane of layers at the interface of metallic layers and the oxide layers in a temperature range equal to or larger than ambient temperature to orient the magnetization of metallic layers in a direction perpendicular to the plane of the layers. #CMT# : #/CMT# Independent claims are included for the following: (1) method for producing magnetic multilayer device; (2) method of using magnetic memory; and (3) method for using logic gate. #CMT#USE : #/CMT# Magnetic multilayer device for e.g. magnetic field sensor, magnetic memory and magnetic logic gate (all claimed). #CMT#ADVANTAGE : #/CMT# The magnetic multilayer device with high longitudinal resistivity and high extraordinary Hall coefficient can be achieved. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of the magnetic device. #CMT#INORGANIC CHEMISTRY : #/CMT# The metallic layer is selected from group consisting of aluminum, magnesium, ruthenium, tantalum, chromium, zirconium, hafnium, titanium, vanadium, silicon, copper, tungsten, cobalt, nickel or iron, titanium nitride, copper nitride, iridium manganese, platinum manganese or nickel iron chromium.</p> |
