METHOD FOR RECOVERY OF HYDROPHOBICITY WITH DAMAGED LOW-K ORGANOSILICATE FILMS IN SUPERCRITICAL CARBON DIOXIDE

摘要

PURPOSE: A method for being restored to a former state hydrophobicity of an organosilicate film of a low dielectric constant which is damaged in the supercritical carbon dioxide eliminates the unnecessary water peak adsorbed in the film doing the heat pretreatment in the organosilicate film and is damaged. The moisture re-adsorption by exposure can be shirked among the air. CONSTITUTION: A property of an organosilicate film of a low dielectric constant which is used after a plasma etching process/ashing for the insulating layer of the damaged and low dielectric constant is restored using the supercritical carbon dioxide. In order that film has the hydrophobicity to the surface inside, film is heat-treated. The heat-treated film as described above is restored using the silylating agent in the supercritical carbon dioxide. It is processed.