发明名称 |
PHOTOELECTRIC CONVERSION APPARATUS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
This invention provides a photoelectric conversion apparatus, which can realize a stably high photoelectric conversion efficiency using a transparent electrode having an optimized relationship between electrical resistivity and transmittance, and a method for manufacturing the same. At least one of transparent electrodes (12, 16) is formed of a Ga-free ZnO layer or a Ga-added ZnO layer. The content of Ga in the ZnO layer is not more than 5 atomic% based on Zn in the ZnO layer. The ZnO layer is formed by a sputtering method using an oxygen-containing rare gas as a sputtering gas. The content of oxygen in the sputtering gas is not less than 0.1% by volume and not more than 5% by volume based on the total volume of the oxygen and rare gas. |
申请公布号 |
KR20100032921(A) |
申请公布日期 |
2010.03.26 |
申请号 |
KR20107002633 |
申请日期 |
2007.09.18 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
YAMASHITA NOBUKI;WATANABE TOSHIYA;SAKAI SATOSHI;NAKANO YOUJI |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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