| 摘要 |
PURPOSE: A manufacturing method of semiconductor device, and an ILD(InterLayer Dielectric) liner formation method are provided so that it can control that the ion inserted in an inter-layer insulating film moves to the sub-element domain. CONSTITUTION: An element area is formed on a semiconductor substrate(11). The ILD liner process is proceed on the top of the element area and an ILD liner(18) is evaporated. The evaporation of the ILD liner evaporates the TEOS(Tetra Ethyl Ortho Silicate) to the PECVD(Plasma Enhanced CVD) mode. A hydrogen layer(19) is formed at the upper part of the ILD liner using NH3. The inter-layer insulating film(20) is evaporated at the upper part of the ILD liner in the PE CVD manner BPSG(Borophospho-Silicate Glass) or the PSG(Phospho-Silicate Glass) manner. The hydrogen layer is evaporated to the PE CVD manner.
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