| 摘要 |
<p>PURPOSE: A photopolymerizable negative photoresist modified polymer and an inorganic polymer-type negative photoresist composition including the same are provided to enable mass production of inorganic polymer pattern and structure with size of maximum 1cm and minimum 10nm. CONSTITUTION: A photopolymerizable negative photoresist modified polymer is prepared by reaction of a polymer including a repeating unit represented by -(Si(Ra)2-NH)n- or -(Si(NHRd)(Rb)-O)m-(Si(Rc)2-O)k- with a diacryl compound of chemical formula 2. In chemical formula, Ra, Rb and Rc are independently selected from H, ORd, NHRd, vinyl or C1~C10 low alkyl group; Rd is H or C1~C10 linear or branched low alkyl group; n, m and k are an integer of 1 ~ 200.</p> |
