| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with improved hot carrier resistance without deteriorating the characteristics of a high withstand voltage element and a low withstand voltage element, and to provide a method for manufacturing the same. SOLUTION: In a high withstand voltage element area 7 of the semiconductor device 1, a gate insulating film 10 for the high withstand voltage element is formed on the surface of a silicon substrate 2 and a gate electrode 11 for the high withstand voltage element is formed on the gate insulating film 10 for the high withstand voltage element. In the high withstand voltage element area 7, a high withstand voltage side source region 13 and a high withstand voltage side drain region 14 adjacent to a channel region 38 opposed to the gate electrode 11 for the high withstand voltage element are formed on a surface layer part of the silicon substrate 2. Then, a bird's beak portion 37 with thickness larger than that of a portion opposed to a center part of the gate electrode 11 for the high withstand voltage element is formed on a portion of the gate insulating film 10 for the high withstand voltage element, which is opposed to the end part of the gate electrode 11 for the high withstand voltage element. COPYRIGHT: (C)2010,JPO&INPIT
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