COMPOSITION FOR FILM FORMATION, INSULATING FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE

摘要

According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n  (I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.