发明名称 |
COMPOSITION FOR FORMING SIDE WALL |
摘要 |
<p>A composition for forming a side wall, which is suitable for forming a side wall in contact with a photoresist pattern. Specifically disclosed is a composition for forming a side wall for lithography, which contains a silicon-containing polymer, which has a silanol group at an end while containing structural units represented by formula (1a) and formula (1b) (wherein R3 represents an organic group), and a solvent mainly composed of a specific organic solvent. Also specifically disclosed is a composition for forming a side wall for lithography, which contains a silicon-containing polymer, which has a silanol group or alternatively a silanol group and a hydrogen atom at an end while containing at least one structural unit represented by formula (2) and/or formula (3) (wherein R2 and R1 each represents an organic group), and a solvent mainly composed of a specific organic solvent.</p> |
申请公布号 |
WO2010032796(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
WO2009JP66277 |
申请日期 |
2009.09.17 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD.;MARUYAMA, DAISUKE;YAGUCHI, HIROAKI;SAKAIDA, YASUSHI |
发明人 |
MARUYAMA, DAISUKE;YAGUCHI, HIROAKI;SAKAIDA, YASUSHI |
分类号 |
H01L21/027;G03F7/40;H01L21/3065 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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