发明名称 COMPOSITION FOR FORMING SIDE WALL
摘要 <p>A composition for forming a side wall, which is suitable for forming a side wall in contact with a photoresist pattern. Specifically disclosed is a composition for forming a side wall for lithography, which contains a silicon-containing polymer, which has a silanol group at an end while containing structural units represented by formula (1a) and formula (1b) (wherein R3 represents an organic group), and a solvent mainly composed of a specific organic solvent. Also specifically disclosed is a composition for forming a side wall for lithography, which contains a silicon-containing polymer, which has a silanol group or alternatively a silanol group and a hydrogen atom at an end while containing at least one structural unit represented by formula (2) and/or formula (3) (wherein R2 and R1 each represents an organic group), and a solvent mainly composed of a specific organic solvent.</p>
申请公布号 WO2010032796(A1) 申请公布日期 2010.03.25
申请号 WO2009JP66277 申请日期 2009.09.17
申请人 NISSAN CHEMICAL INDUSTRIES, LTD.;MARUYAMA, DAISUKE;YAGUCHI, HIROAKI;SAKAIDA, YASUSHI 发明人 MARUYAMA, DAISUKE;YAGUCHI, HIROAKI;SAKAIDA, YASUSHI
分类号 H01L21/027;G03F7/40;H01L21/3065 主分类号 H01L21/027
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