METHOD OF FABRICATING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing a thin film transistor is provided to reduce the number of manufacturing process and a manufacturing cost by reducing the number of mask used for manufacturing the thin film transistor. CONSTITUTION: A method for manufacturing a thin film transistor comprises the following steps: forming an amorphous silicon thin film on a substrate(110); forming a thermal oxide film on a crystallized silicon thin film by exposing the silicon thin film to oxygen gas; forming an active layer(124) and an etch stopper(145) on the substrate by patterning the crystalized silicon thin film and the thermal oxide; forming source / drain electrodes(122,123) on the active layer while leaving a n+ layer(125) on the center of the active layer; forming a first insulating layer(115a) on the substrate in which the source / drain electrode is included; forming a gate electrode(121) on the first insulating layer; forming a second insulating layer(115b) on the substrate in which the gate electrode is included; forming a contact hole which exposes a partial domain of the drain electrode by eliminating a part of the first insulating layer and the second insulating layer; and forming a pixel electrode(118) which electrically connects to the drain electrode through the contact hole.