| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and method for pulling a silicon single crystal, by which concentration of oxygen in the plane can be uniformized while maintaining the oxygen concentration in the silicon single crystal at a high level. SOLUTION: The apparatus 100 for pulling a silicon single crystal includes: a crucible rotation driving part 150 for elevating/lowering a crucible 130 while rotating it; a heater driving part 143 for elevating/lowering a heater 142; a magnetic field driving part 141 for elevating/lowering a magnetic field applying part 140, and a control part 160 for controlling driving of the crucible rotation driving part 150, the heater driving part 143 and the magnetic field driving part 141. The control part 160 controls driving of the magnetic field driving part 141 so as to elevate/lower the magnetic field applying part 140 so that the magnetic field center position of the magnetic field applying part 140 is located always in a predetermined position from the surface of a silicon melt 116 while synchronizing with the elevating/lowering of the crucible 130 by the crucible rotation driving part 150, and at the same time, controls driving of the heater driving part 143 to elevate/lower the heater 142 on the basis of predetermined data so that the temperature of the silicon melt 116 is always constant. COPYRIGHT: (C)2010,JPO&INPIT
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