| 摘要 |
PROBLEM TO BE SOLVED: To prevent removal of an offset spacer. SOLUTION: A semiconductor device includes: a gate insulating film 13A formed on a first conductivity type semiconductor region 10x; a gate electrode 15A formed on the gate insulating film; the offset spacer 17A formed on a side face of the gate electrode; an inner sidewall 19 of the L-shaped sectional form, formed on the side face of the gate electrode via the offset spacer; and an insulating film 24 formed to cover the gate electrode 15A, the offset spacer 17A, the inner sidewall 19 and a region located on the outer side of the inner sidewall 19 on the semiconductor region 10x. The offset spacer 17A has an inner offset spacer 16 formed on the side face of the gate electrode and an outer offset spacer 17 formed on the side face of the gate electrode so as to cover the inner offset spacer 16. The outer offset spacer is formed in contact with an upper end and outer side faces of the inner offset spacer. COPYRIGHT: (C)2010,JPO&INPIT
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