发明名称 |
Non-volatile memory device and page buffer circuit thereof |
摘要 |
A non-volatile memory device includes a cell array including a plurality of memory cells, a page buffer block controlling bitlines of the plurality of memory cells to program the memory cells to a first target state or a second target state, and a control logic configured to skip a verify operation for the memory cells programmed to the first target state and perform a verify operation for the memory cells programmed to the second target state during a second program loop when the memory cells programmed to the first target state are determined to be in a pass condition during a first program loop.
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申请公布号 |
US2010074011(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20090460940 |
申请日期 |
2009.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG KYUNG-MIN;HWANG SANGWON;BAEK JONG-NAM |
分类号 |
G11C16/04;G11C7/10 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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