| 摘要 |
A two-wavelength semiconductor laser 1 includes an n-type GaN substrate 101, an n-type GaAs substrate 201 disposed on a predetermined face of the n-type GaN substrate 101, a blue-violet laser 100 provided on one of faces of the n-type GaN substrate 101 and including a multi-quantum well active layer 105, and a red laser 200 provided on one of faces of the n-type GaAs substrate 201 and including a multi-quantum well active layer 205. The blue-violet laser 100 and the red laser 200 emit laser beams having wavelengths different from each other. The blue-violet laser 100 and the red laser 200 are disposed so that their cavity length directions are almost parallel with each other. The cavity length of the blue-violet laser 100 is shorter than that of the red laser 200.
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