发明名称 ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TUNING OF INTEGRATED CIRCUITS
摘要 <p>An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.</p>
申请公布号 WO2010033122(A1) 申请公布日期 2010.03.25
申请号 WO2008US76976 申请日期 2008.09.19
申请人 AGERE SYSTEMS, INC.;BAIOCCHI, FRANK, A.;CARGO, JAMES, T.;DELUCCA, JOHN, M.;DUTT, BARRY, J.;MARTIN, CHARLES 发明人 BAIOCCHI, FRANK, A.;CARGO, JAMES, T.;DELUCCA, JOHN, M.;DUTT, BARRY, J.;MARTIN, CHARLES
分类号 H01L21/02;H01C17/26 主分类号 H01L21/02
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