| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device adapted to a high luminance and a large current. <P>SOLUTION: The light-emitting device 1 includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a semiconductor multilayer structure 10 having an active layer 105 sandwiched between the first and second semiconductor layers; a thin line electrode 116 having a current supply unit 116a disposed in an upper partial region of the first semiconductor layer to supply an electric current from outside to the semiconductor multilayer structure 10 and a light reflector 116b adjacent to the current supply unit 116a to reflect light emitted by the active layer 105; and a surface center electrode 110 electrically connected to the thin line electrode 116 and disposed over the first semiconductor layer through an insulating transmission layer 142 for transmitting light. <P>COPYRIGHT: (C)2010,JPO&INPIT |
