| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor element capable of obtaining effective ohmic contact, without performing heat treatment for mixing two metallic layers in the formation of an electrode. <P>SOLUTION: A purple-blue color semiconductor laser element 100 (nitride-based semiconductor element) has an n-type GaN substrate 11, and an n-side electrode 29 that includes an Al layer 31 formed on the surface of the n-type GaN substrate 11, having about 6 nm thickness and composed of Al and an Hf layer 32, covering a surface of the Al layer 31 which is the opposite side to the n-type GaN substrate 11, having about 3 nm thickness and composed of Hf. <P>COPYRIGHT: (C)2010,JPO&INPIT |
