发明名称 |
PHOTOELECTRIC TRANSDUCER AND PRODUCTION METHOD THEREOF |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric transducer capable of inhibiting a leak current of a photodiode and a production method thereof. <P>SOLUTION: This photoelectric transducer includes: a thin film transistor 101 formed on a substrate 1; a photodiode 100 connected with a drain electrode 7 of the thin film transistor 101 in which a photoelectric transducing layer 11 is provided between an upper electrode 12 and a lower electrode 10; a second passivation film 13 covering at least the upper electrode 12; a third passivation film 14 provided as an upper layer of the second passivation film 13 and coating the thin film transistor 101 and the photodiode 100; and a bias wiring 16 connected with the upper electrode 12 through a contact hole CH3 provided through the second passivation film 13 and the third passivation film 14. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010067762(A) |
申请公布日期 |
2010.03.25 |
申请号 |
JP20080232085 |
申请日期 |
2008.09.10 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
HAYASHI MASAMI;MIYAYAMA TAKASHI |
分类号 |
H01L27/146;G01J1/02;G01T1/24;H01L21/336;H01L27/14;H01L29/786 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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