| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an image sensor which improves fill-factor and hardly causes charge sharing: and to provide a manufacturing method thereof. <P>SOLUTION: This image sensor includes: a readout circuit 120 formed on a first substrate 100; an interlayer insulation layer 160 formed on the first substrate 100; a wiring 150 electrically connected to the readout circuit 120 and formed on the interlayer insulation layer 160; and an image sensing section 210 formed on the wiring 150. The wiring 150 includes a nitride film barrier layer 153n formed below lower barrier layers 153p, 153q. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
