| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor with a large on-state current by an inexpensive printing process. Ž<P>SOLUTION: The thin-film transistor 1 is constituted of an insulating substrate 2, a gate electrode 3, a gate insulating film 4, a semiconductor layer 5 of a lower layer, a source electrode 6, a drain electrode 7 and an upper layer semiconductor layer 8. The semiconductor layer is constituted of two layers as an especially characteristic structure so that the lower layer composed of the semiconductor layer 5, the source electrode 6 and the drain electrode 7, and the upper layer of the semiconductor layer 8 are laminated sequentially. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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