发明名称 |
Semiconductor Device and Method of Forming the Same |
摘要 |
A method of forming a semiconductor device includes forming a trench on a semiconductor substrate to define an active region, forming a radical oxide layer on a sidewall and a bottom surface of the trench, and forming a nitride layer on the radical oxide layer. The conduction band offset of the radical oxide layer is greater than the conduction band offset of a thermal oxide layer having the same thickness as the radical oxide layer.
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申请公布号 |
US2010075479(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20090551311 |
申请日期 |
2009.08.31 |
申请人 |
KIM DONGCHAN;BAEK SUNGKWEON |
发明人 |
KIM DONGCHAN;BAEK SUNGKWEON |
分类号 |
H01L21/762;H01L21/20;H01L21/28 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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