SENSING FOR MEMORY READ AND PROGRAM VERIFY OPERATIONS IN A NON-VOLATILE MEMORY DEVICE

摘要

Methods for sensing in a memory device, a memory device, and a memory system are disclosed. In one such sensing method, a single read operation with multiple sense amplifier circuit comparisons to a reference threshold level are performed to determine a state of a selected memory cell. A ramped voltage turns on the selected memory cell when the ramped voltage reaches the threshold voltage to which the selected memory cell is programmed. In one embodiment, the turned on memory cell discharges its respective bit line.