| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a halftone-type EUV mask produced by selecting the material of a halftone film that has no only wide selectivity (flexibility) of reflectivity and high cleaning liquid-resistance, but also high processing accuracy of etching, a halftone-type EUV mask blank, a production method of the halftone-type EUV mask and a pattern transfer method. <P>SOLUTION: This halftone-type EUV mask is a halftone-type EUV masK comprising a substrate, a high-reflectivity portion formed on the substrate, and a patterned low-reflectivity portion formed on the high reflectivity portion in which the low reflectivity portion contains Ta (tantalum) and Nb (niobium). <P>COPYRIGHT: (C)2010,JPO&INPIT |
