| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of preventing deformation of a photoresist pattern or increase in LWR (line width roughness) when a silicon oxide film is formed on the photoresist pattern in a sidewall spacer method. <P>SOLUTION: The pattern forming method comprises at least: forming a photoresist film on a substrate; exposing the photoresist film to high energy rays; developing the film with a developing solution to form a photoresist pattern; and forming a pattern on the substrate by a method of forming a silicon oxide film as a spacer on the sidewalls of the photoresist pattern, wherein at least the silicon oxide film obtained by a CVD method or an ALD (atomic layer deposition) method by reacting a silane gas having at least one silazane coupling in one molecule with the photoresist pattern to oxidize is used. <P>COPYRIGHT: (C)2010,JPO&INPIT |
