MEASUREMENT OF DIFFRACTING STRUCTURE, BROADBAND, POLARIZATION, ELLIPSOMETRY, AND UNDERLYING STRUCTURE

摘要

PROBLEM TO BE SOLVED: To determine grating shape parameters of a diffracting structure on a wafer. SOLUTION: Before diffraction from a diffracting structure 12c on a semiconductor wafer 12 is measured, when necessary, the film thickness and refractive index of a film 12b located below the structure are first measured using a spectroscopic reflectometer 60 or a spectroscopic ellipsometer. A rigorous model is then used to calculate the intensity or an ellipsometric signature of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain the intensity or the ellipsometric signature of the diffracting structure. The signature is then matched with signatures in the database to determine the grating shape parameters of the structure. COPYRIGHT: (C)2010,JPO&INPIT