发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS |
摘要 |
A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.
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申请公布号 |
US2010075489(A1) |
申请公布日期 |
2010.03.25 |
申请号 |
US20080158906 |
申请日期 |
2008.01.09 |
申请人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;NAKAMOTO KEIICHI;ITO HIROYUKI;MIZUNO BUNJI |
发明人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;NAKAMOTO KEIICHI;ITO HIROYUKI;MIZUNO BUNJI |
分类号 |
H01L21/26;C23C16/513 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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