A semiconductor device including a memory cell is provided. The memory cell comprises a transistor, a memory element and a capacitor. One of first and second electrodes of the memory element and one of first and second electrodes of the capacitor are formed by a same metal film. The metal film functioning as the one of first and second electrodes of the memory element and the one of first and second electrodes of the capacitor is overlapped with a film functioning as the other of first and second electrodes of the capacitor.
申请公布号
WO2010032599(A1)
申请公布日期
2010.03.25
申请号
WO2009JP65019
申请日期
2009.08.21
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;ABE, TAKAYUKI;TAKAHASHI, YASUYUKI