发明名称 CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material. Accordingly, the portion in which the metallic film is surrounded by the transparent conductive film, the insulating base film, and the protecting film (173) to which it is in contact with, can be avoided from exposure to air because the side surface of the metallic film of the connecting wiring is covered with the protecting film (173).
申请公布号 US2010072495(A1) 申请公布日期 2010.03.25
申请号 US20090625592 申请日期 2009.11.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 H01L29/786;H01L33/00;G02F1/1343;G02F1/1368;G09F9/00;G09F9/30;H01L23/48;H01L23/52;H01R11/01;H05K1/09 主分类号 H01L29/786
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