ULTRAVIOLET-SENSITIVE SCHOTTKY BARRIER PHOTODIODE

摘要

A Schottky barrier photodiode sensitive in ultraviolet range is performed on the basis of zinc selenide having a nickel barrier layer on the face of ZnSe-substrate and an indium layer on the back side thereof. On the barrier super-thin nickel layer an auxiliary antireflecting coating which includes mixture of putty powder (SnO2) and (InO) indium oxide or a layer of putty powder (SnO) doped by fluorine is performed. The antireflecting coating and metal barrier layer have to back out of crystal edge for a distance which is not less than a sum of free length of minor carriers and width of spatial charge aria in a substrate made of zinc selenide material.