发明名称 ORGANIC SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS AND COMPOSITION FOR FORMING INSULATING LAYER
摘要 <p>An organic semiconductor device having low moisture absorption, wherein characteristics rarely deteriorate over time.  An electronic device and an electronic apparatus each comprising the organic semiconductor device and having high reliability. The organic semiconductor device comprises a source electrode (20a), a drain electrode (20b), a gate electrode (50), a gate insulating layer (40) for insulating the source electrode (20a) and the drain electrode (20b) from the gate electrode (50), an organic semiconductor layer (30) formed in contact with the gate insulating layer (40), and a buffer layer (second insulating layer) (60) formed in contact with the organic semiconductor layer (30) on the reverse side of the gate insulating layer (40) side face.  At least one of the gate insulating layer (40) and the buffer layer (60) contains an insulating polymer having a main chain that contains a repeating unit represented by general formula (1) or (2). (In the formulae, R1 and R2 may be the same or different and each represents a divalent organic group containing an aromatic ring; and Y represents an oxygen atom or a sulfur atom.)</p>
申请公布号 WO2010032834(A1) 申请公布日期 2010.03.25
申请号 WO2009JP66400 申请日期 2009.09.18
申请人 SEIKO EPSON CORPORATION;NIPPONSHOKUBAI CO., LTD.;YASUDA TAKURO;KAWASE TAKEO;KARASAWA JUNICHI;INOUE KEIICHI;OMOTE KAZUSHI;ARAI TOMOYA;ANDO KEIKO;ASAKO YOSHINOBU 发明人 YASUDA TAKURO;KAWASE TAKEO;KARASAWA JUNICHI;INOUE KEIICHI;OMOTE KAZUSHI;ARAI TOMOYA;ANDO KEIKO;ASAKO YOSHINOBU
分类号 H01L29/786;C08G65/40;C08G75/08;H01L21/312;H01L21/336;H01L51/05;H01L51/30 主分类号 H01L29/786
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