| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a high breakdown voltage MOS transistor having high driving performance and a thick gate film. SOLUTION: In an LOCOS offset MOS transistor having high breakdown voltage, in order to prevent a gate oxide film 6 formed on a channel formation region 7 from being etched even in removing the gate oxide film with a polysilicon gate electrode as a mask to form a second conductivity type high concentration source region 4 and a second conductivity type high concentration drain region 5, a source field oxide film 14 is also formed on a source side, and in addition, the length of a second conductivity type high concentration source field region 13 is optimized. Accordingly, it is possible to obtain the high breakdown voltage MOS transistor having high driving performance and the thick gate film. COPYRIGHT: (C)2010,JPO&INPIT
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