| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a method for manufacturing the same equipped with a resistance change type nonvolatile memory cell which reduces a leak current by preventing short between memory cells. SOLUTION: The nonvolatile semiconductor memory device has a first wiring layer 13 which is provided on a first insulating layer 11 and extended in a first direction, and a nonvolatile memory cell MC which is provided in a peeler shape on the first wiring layer 13 to include a non-ohmic element 18 and a variable resistance element 14 connected in series. A barrier layer 21 is provided on the memory cell MC and constituted of a single layer in an in-plane direction. A conductive layer 30 is provided on the barrier layer 21 and constituted of a single layer in an in-plane direction. A second insulating layer 20 is provided on the first insulating layer 11 to cover the side surfaces of the memory cell MC, the barrier layer 21, and the conductive layer 30. A second wiring layer 22 is provided on the conductive layer 30 and extended in a second direction. COPYRIGHT: (C)2010,JPO&INPIT
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