| 摘要 |
PURPOSE: A high density trench field effect transistor structure and a forming method thereof are provided to reduce a cell space by separating source regions from the surface of mesa regions. CONSTITUTION: A semiconductor structure(100) includes trenches(101), a gate electrode, first conductive type well regions(116). Second conductive source regions(124), and first conductive type high density body regions(118). The trenches are expanded to a semiconductor region. The gate electrode is formed inside each trench. The well regions are expanded to a semiconductor region between the trenches. Source regions are formed on the well regions. The high density body regions are formed on the well regions. A part of the semiconductor region forms the mesa regions. The source regions and high density body regions are adjacent to the sidewall of the trench. The high density body regions are expanded to the upper surface of the mesa regions.
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