| 摘要 |
A semiconductor device (19-1) is provided with a source electrode (3s) and a drain electrode (3d) arranged on a substrate (1); an insulating partition wall (5), which is provided with a first opening (5a) reaching the end sections of the source electrode (3s) and the drain electrode (3d) and a region between the electrodes (3s, 3d), and is arranged on the substrate (1); a channel section semiconductor layer (7a), which is composed of a semiconductor layer (7) formed from above the partition wall (5), and is arranged at the bottom section of the first opening (5a) by being separated from the semiconductor layer (7) formed on the partition wall (5); a gate insulating film (9) formed entirely over the surface from above the semiconductor layer (7) including a channel section semiconductor layer (7a); and a gate electrode (11a) arranged on the gate insulating film (9) over the channel section semiconductor layer (7a).
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