| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film field effect transistor which can easily be made to be highly precise and is superior in productivity by using an amorphous oxide semiconductor having high field effect mobility and high an on/off-ratio, and to provide a manufacturing method of the transistor. <P>SOLUTION: The thin film field effect transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating film formed on the gate electrode, an amorphous oxide semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode which are electrically detached on the amorphous oxide semiconductor layer. The transistor has an etching stopper layer formed of a crystalline oxide on the amorphous oxide semiconductor which is located between the source electrode and the drain electrode and forms a channel. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
