| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose number of processes for manufacturing a semiconductor device having a plurality of layers is equal to the number of process steps for manufacturing a semiconductor device having a single layer, and to provide the semiconductor device. Ž<P>SOLUTION: The semiconductor device includes a first active area which is extended in the same direction and is positioned at predetermined intervals in parallel, and a second active area which is positioned on a layer upper than the layer with the first active area positioned thereon and is extended in the direction along the extension of the first active area, and is positioned at the predetermined intervals in parallel. The first active area and second active area have first and second impurity doping areas which are formed respectively along both side edges of the first or second active area. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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