| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a film by a catalytic chemical vapor deposition method using a unit layer post-treatment, the method improving within-wafer nonuniformity of a silicon nitride film or the like, stepper coverage, and film quality such as an I-V breakdown voltage characteristic, and laminating and forming a thin film by forming films on a unit layer basis and thereafter executing surface treatment thereto. SOLUTION: The method of forming a film includes: repeating a cycle of steps including a film formation step of introducing a mixed gas containing silane gas and ammonia gas as a raw gas in the form of rectangular pulse in reaction vessel 2 and performing catalytic pyrolysis of the raw gas by means of catalytic material 8 to form a silicon nitride film on a substrate 5, one surface treatment step of bringing ammonia gas into contact with the catalytic material 8 and thereafter exposing the ammonia gas to the surface of the silicon nitride film on the substrate 5, and the other surface treatment step of bringing hydrogen gas into contact with the catalytic material 8 and thereafter exposing the hydrogen gas to the surface of the silicon nitride film on the substrate 5; and laminating a thin film subjected to post-treatment on a unit layer basis. COPYRIGHT: (C)2010,JPO&INPIT
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