SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING SAME

摘要

Methods of fabricating semiconductor devices using electrode-less wet-etching techniques to reduce defect densities on etched group III-nitride semiconductor surfaces are described herein. The methods generally involve contacting an etched surface of a component of a semiconductor device with a solution comprising a metal hydroxide and an oxidizing agent effective to reduce a roughness of the etched surface, wherein the etched surface is formed from a composition comprising a nitride of a group III element. Improved semiconductor devices are also disclosed.