| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To execute electrical and mechanical connection between a semiconductor wafer and a wiring substrate with high reliability when laminating the semiconductor wafer and the wiring substrate in a manufacturing process of a semiconductor device. <P>SOLUTION: A manufacturing method of a semiconductor device has: a wafer manufacturing step F1 for manufacturing a semiconductor wafer having each electrode pad; a substrate manufacturing step F2 for manufacturing a wiring substrate having a wiring part formed according to the position of each electrode pad; and a laminating step F3 for laminating the semiconductor wafer and the wiring substrate. In the wafer manufacturing step F1, an anti-oxidization film is formed in a state of covering surfaces of the electrode pads. In the laminating step F3, the semiconductor wafer and the wiring substrate are laminated after removing the anti-oxidization film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
