| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ceramic for a plasma treatment apparatus which has an excellent resistance against halogenic corrosive gases and plasma and the like, and a low resistance, controls the contamination with impurity metals attributable to the compositional raw materials of the ceramic in the halogen plasma process, and is favorably used for a constitutional member of a plasma treatment apparatus for manufacturing semiconductors, liquid crystals and the like. <P>SOLUTION: The ceramic is obtained by adding ≥3 wt.% and ≤30 wt.% cerium oxide to yttria and ≥3 wt.% and ≤50 wt.% niobium pentaoxide to yttria and firing the yttria in a reduced atmosphere and has an open pore ratio of ≤1.0%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
