| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a Schottky barrier diode, with which a leakage current when applying a reverse voltage can be reduced, and a Schottky barrier diode. SOLUTION: An NO oxide film 3 containing silicon carbide, oxygen, and nitrogen is formed on a semiconductor layer 1 comprising silicon carbide, and then a hole piercing the NO oxide layer 3 is formed. N atoms 4 on the surface of the semiconductor layer 1 exposed by this step are removed. An electrode 7 forming a Schottky junction together with the semiconductor layer 1 is formed on the semiconductor layer 1 from which N atoms on the surface have been removed in this step. COPYRIGHT: (C)2010,JPO&INPIT |
