METHOD FOR CREATING PATTERN DATA, METHOD FOR CREATING MASK, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD AND PROGRAM FOR CREATING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for correcting a dimensional change with high accuracy even when the size of a figure pattern after drawn is almost equal to or significantly larger than the range influenced by a phenomenon that causes dimensional changes in the figure pattern.

SOLUTION: A method for creating pattern data includes: a step (S102) of setting a representative point on a side of a figure pattern defined by a design dimension; a step (104) of determining a correction amount of the representative point by using and solving an equation with the correction amount of the representative point as an unknown for correcting the dimensional change induced in the figure pattern after the pattern is drawn on a mask substrate for exposure by using an electron beam; and a step (S106) of resizing the dimension of the figure pattern in such a manner that the representative point corrected by the correction amount is positioned on the corresponding side of the resized pattern. By this method, even when the size of the figure is almost equal to or enough larger than the range influenced by the phenomenon, dimensional changes caused by the phenomenon can be corrected with high accuracy.

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