| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method thereof by which high productivity can be obtained by making the resistance of an RF device lower, thereby enhancing efficiency. Ž<P>SOLUTION: The compound semiconductor device includes: an AlGaN/GaN substrate on which a GaN layer 11 and an AlGaN layer 12 are formed; and a source electrode 14 and a drain electrode 15 which respectively arrive at the GaN layer 11 through a two-dimensional carrier layer 13 formed on a boundary between the GaN layer 11 and the AlGaN layer 12, are respectively formed on openings in which an angle between each side face and the substrate surface of the AlGaN/GaN substrate is 90±10°, and are composed of metal layers. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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