| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is advantageous for reducing parasitic resistance, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The semiconductor device includes a semiconductor substrate 11, a gate electrode 13 provided on the semiconductor substrate through a gate insulating film 12, an extension region LDD provided separately in the semiconductor substrate to sandwich the gate electrode, a distortion imparting layer 22 formed in the semiconductor substrate to hold the opposite sides of the extension region in order to impart distortion to the semiconductor substrate and having a lattice constant different from that of the semiconductor substrate, a source/drain S/D provided separately in the semiconductor substrate on both sides of the extension region to sandwich the gate electrode, and a silicide layer SS/D formed at the source/drain, wherein the interface Si-Si of the distortion imparting layer and the semiconductor substrate matches at least a part of the footprint of the silicide layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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