METHODS FOR FABRICATING FACEPLATE OF SEMICONDUCTOR APPARATUS

摘要

A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.